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PD - 90673B
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA)
Product Summary
Part Number IRHM7450 IRHM3450 IRHM4450 IRHM8450 Radiation Level 100K Rads (Si) 300K Rads (Si) 500K Rads (Si) 1000K Rads (Si) RDS(on) 0.45 0.45 0.45 0.45 ID 11A 11A 11A 11A
IRHM7450 JANSR2N7270 500V, N-CHANNEL
REF: MIL-PRF-19500/603 (R) RAD-Hard HEXFET TECHNOLOGY
TM
QPL Part Number JANSR2N7270 JANSF2N7270 JANSG2N7270 JANSH2N7270
TO-254AA
International Rectifier's RAD-Hard TM HEXFET (R) technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
Features:
n n n n n n n n
Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Eyelets Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25C ID @ VGS = 12V, TC = 100C IDM PD @ T C = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current A Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy A Avalanche Current A Repetitive Avalanche Energy A Peak Diode Recovery dv/dt A Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page 11 7.0 44 150 1.2 20 500 11 15 3.5 -55 to 150
Pre-Irradiation
Units A
W
W/C
V mJ A mJ V/ns
o
C
300 (0.063 in. (1.6mm) from case for 10s) 9.3 (Typical)
g
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IRHM7450, JANSR2N7270
Pre-Irradiation
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BV DSS/T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min
500 -- -- -- 2.0 4.0 -- -- -- -- -- -- -- -- -- -- -- --
Typ Max Units
-- 0.6 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 8.7 -- -- 0.45 0.50 4.0 -- 50 250 100 -100 150 30 75 45 190 190 130 -- V V/C V S( ) A
Test Conditions
VGS =0 V, ID = 1.0mA Reference to 25C, ID = 1.0mA VGS = 12V, ID = 7.0A VGS = 12V, ID = 11A VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 7.0A VDS= 400V,VGS=0V VDS = 400V VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS = 12V, ID = 11A VDS = 250V VDD = 250V, ID = 11A, VGS = 12V, RG = 2.35
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
nA nC
ns
nH
Measured from drain lead (6mm/0.25in. from package) to source lead (6mm/0.25in. from package)
Ciss C oss C rss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
-- -- --
4000 330 52
-- -- --
pF
VGS = 0V, VDS = 25V f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD trr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- 11 44 1.6 1100 16
Test Conditions
A
V ns C Tj = 25C, IS = 11A, VGS = 0V A Tj = 25C, IF = 11A, di/dt 100A/s VDD 50V A
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC RthCS RthJA Junction-to-Case Case-to-sink Junction-to-Ambient
Min Typ Max
-- -- -- -- 0.83 0.21 -- -- 48
Units
C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on the International Rectifier Website. For footnotes refer to the last page
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Radiation Characteristics Pre-Irradiation
IRHM7450, JANSR2N7270
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation AA
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage A Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source A On-State Resistance (TO-3) Static Drain-to-Source A On-State Resistance (TO-254AA) Diode Forward Voltage A
100K Rads(Si)1
300 K- 1000K Rads (Si)2
Units V nA A V
Test Conditions
VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA V GS = 20V VGS = -20 V VDS=80V, VGS =0V VGS = 12V, ID = 7.0A VGS = 12V, ID = 7.0A VGS = 0V, IS = 11A
Min 500 2.0 -- -- -- -- -- --
Max -- 4.0 100 -100 50 0.45 0.45 1.6
Min 500 1.25 -- -- -- -- -- --
Max -- 4.5 100 -100 50 0.6 0.6 1.6
1. Part number IRHM7450 (JANSR2N7270) 2. Part numbers IRHM3450 (JANSF2N7270), IRHM4450 (JANSG2N7270) and IRHM8450 (JANSH2N7270)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
Ni
LET
(MeV/(mg/cm )) 28
2
Energy
(MeV) 265
Range
(m) 41
@ VGS=0V @VGS=-5V
VDS (V)
@VGS=-10V @VGS=-15V @VGS=-20V
275
275
-
-
-
400 300 VDS 200 100 0 0 -5 -10 VGS -15 -20 Ni
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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IRHM7450, JANSR2N7270
Post-Irradiation Pre-Irradiation
Fig 1. Typical Response of Gate Threshhold Voltage Vs. Total Dose Exposure
Fig 2. Typical Response of On-State Resistance Vs. Total Dose Exposure
Fig 3. Typical Response of Transconductance Vs. Total Dose Exposure
Fig 4. Typical Response of Drain to Source Breakdown Vs. Total Dose Exposure
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Post-Irradiation Pre-Irradiation
IRHM7450, JANSR2N7270
Fig 5. Typical Zero Gate Voltage Drain Current Vs. Total Dose Exposure
Fig 6. Typical On-State Resistance Vs. Neutron Fluence Level
Fig 8a. Gate Stress of VGSS Equals 12 Volts During Radiation
Fig 7. Typical Transient Response of Rad Hard HEXFET During 1x1012 Rad (Si)/Sec Exposure
Fig 8b. VDSS Stress Equals 80% of BVDSS During Radiation
Fig 9. High Dose Rate (Gamma Dot) Test Circuit
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IRHM7450, JANSR2N7270
RadiationPost-Irradiation Characteristics Pre-Irradiation
Note: Bias Conditions during radiation: VGS = 12 Vdc, VDS = 0 Vdc
Fig 10. Typical Output Characteristics Pre-Irradiation
Fig 11. Typical Output Characteristics Post-Irradiation 100K Rads (Si)
Fig 12. Typical Output Characteristics Post-Irradiation 300K Rads (Si)
Fig 13. Typical Output Characteristics Post-Irradiation 1 Mega Rads(Si)
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Radiation Characteristics Pre-Irradiation
IRHM7450, JANSR2N7270
Note: Bias Conditions during radiation: VGS = 0 Vdc, VDS = 400 Vdc
Fig 14. Typical Output Characteristics Pre-Irradiation
Fig 15. Typical Output Characteristics Post-Irradiation 100K Rads (Si)
Fig 16. Typical Output Characteristics Post-Irradiation 300K Rads (Si)
Fig 17. Typical Output Characteristics Post-Irradiation 1 Mega Rads(Si)
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IRHM7450, JANSR2N7270
Pre-Irradiation
Fig 18. Typical Output Characteristics
Fig 19. Typical Output Characteristics
Fig 20. Typical Transfer Characteristics
Fig 21. Normalized On-Resistance Vs. Temperature
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Pre-Irradiation
IRHM7450, JANSR2N7270
Fig 22. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 23. Typical Gate Charge Vs. Gate-to-Source Voltage
Fig 24. Typical Source-Drain Diode Forward Voltage
Fig 25. Maximum Safe Operating Area
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IRHM7450, JANSR2N7270
Pre-Irradiation
VDS V GS RG
RD
D.U.T.
+
- VDD
VGS
Pulse Width 1 s Duty Factor 0.1 %
Fig 27a. Switching Time Test Circuit
VDS 90%
10% VGS
Fig 26. Maximum Drain Current Vs. Case Temperature
td(on)
tr
t d(off)
tf
Fig 27b. Switching Time Waveforms
Fig 28. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Pre-Irradiation
IRHM7450, JANSR2N7270
15V
VDS
L
DRIVER
RG
VGS 20V
D.U.T
IAS tp
+ - VDD
A
0.01
Fig 29a. Unclamped Inductive Test Circuit
V(BR)DSS tp
Fig 29c. Maximum Avalanche Energy Vs. Drain Current
I AS
Fig 29b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
12 V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 30a. Basic Gate Charge Waveform
Fig 30b. Gate Charge Test Circuit
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IRHM7450, JANSR2N7270
Pre-Irradiation
A Pulse width 300 s; Duty Cycle 2% A Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. A Total Dose Irradiation with VDS Bias. 400 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A.
Foot Notes:
A Repetitive Rating; Pulse width limited by
maximum junction temperature.
A VDD = 25V, starting TJ = 25C, L 7.4mH
Peak IL = 11A, VGS = 12V
A I SD 11A, di/dt 140A/s,
VDD 500V, TJ 150C
Case Outline and Dimensions -- Low-Ohmic TO-254AA
0.12 [.005] 3.78 [.149] 3.53 [.139] A 13.84 [.545] 13.59 [.535] 6.60 [.260] 6.32 [.249] 1.27 [.050] 1.02 [.040]
17.40 [.685] 16.89 [.665]
1 2 3
20.32 [.800] 20.07 [.790]
13.84 [.545] 13.59 [.535]
B
C
##'Ab$&d !($Ab$ d
'#Ab""d H6Y
3X
3.81 [.150]
2X
1.14 [.045] 0.89 [.035] 0.36 [.014] BA
3.81 [.150]
127(6
1. 2. 3. 4. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. CONTROLLING DIMENSION: INCH. CONFORMS TO JEDEC OUTLINE TO-254AA. PIN ASSIGNMENTS 1 = DRAIN 2 = SOURCE 3 = GATE
CAUTION BERYLLIA WARNING PER MIL-PRF-19500 Packages containing beryllia shall not be ground, sandblasted, machined or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 05/2006
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